逢甲學報, Band 28逢甲大學, 1995 |
Im Buch
Ergebnisse 1-3 von 16
Seite 659
... channel width , Heff is the effective mobility , and vsat is the saturation velocity . ( iii ) Saturation region [ VGS VT and VDS ≥VDS ( sat ) ] : By modifying Eq . ( 15 ) , the channel current in this region may be obtained as Ich ...
... channel width , Heff is the effective mobility , and vsat is the saturation velocity . ( iii ) Saturation region [ VGS VT and VDS ≥VDS ( sat ) ] : By modifying Eq . ( 15 ) , the channel current in this region may be obtained as Ich ...
Seite 663
... channel SOI device with W / L = 2.4 μm / 0.6μm and back surface depletion . IV . CONCLUSION An analytical model to predict the anomalous ID - VDS and ID - VGS characteristics in fully depleted floating - body n - channel SOI MOSFETs ...
... channel SOI device with W / L = 2.4 μm / 0.6μm and back surface depletion . IV . CONCLUSION An analytical model to predict the anomalous ID - VDS and ID - VGS characteristics in fully depleted floating - body n - channel SOI MOSFETs ...
Seite 664
... Channel SOI MOSFETs " , IEEE Trans . Electron Devices , Vol . 38 , pp . 2082 , 1991 . [ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. Plummer , " Parasitic Bipolar Gain in Fully Depleted n - Channel SOI MOSFETs " , IEEE ...
... Channel SOI MOSFETs " , IEEE Trans . Electron Devices , Vol . 38 , pp . 2082 , 1991 . [ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. Plummer , " Parasitic Bipolar Gain in Fully Depleted n - Channel SOI MOSFETs " , IEEE ...