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Seite 659
矽薄膜金氧半場效電晶體的不尋常電流電壓特性分析 5 where A = Cb / Cof for accumulated back - surface and A = Cb Cob / [ ( Cb + Cob ) Cof ] for depleted back - surface , W is the channel width , Heff is the effective mobility , and vsat is ...
矽薄膜金氧半場效電晶體的不尋常電流電壓特性分析 5 where A = Cb / Cof for accumulated back - surface and A = Cb Cob / [ ( Cb + Cob ) Cof ] for depleted back - surface , W is the channel width , Heff is the effective mobility , and vsat is ...
Seite 663
Simulated hysteresis width ( AV ) versus doping concentration and film thickness characteristics for the n - channel SOI device with W / L = 2.4 μm / 0.6μm and back surface depletion . IV . CONCLUSION An analytical model to predict the ...
Simulated hysteresis width ( AV ) versus doping concentration and film thickness characteristics for the n - channel SOI device with W / L = 2.4 μm / 0.6μm and back surface depletion . IV . CONCLUSION An analytical model to predict the ...
Seite 664
J. S. T. Huang , J. S. Kueng , and T. Fabian , " An Analytical Model for Snapback in n- Channel SOI MOSFETs " , IEEE Trans . Electron Devices , Vol . 38 , pp . 2082 , 1991 . [ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. ...
J. S. T. Huang , J. S. Kueng , and T. Fabian , " An Analytical Model for Snapback in n- Channel SOI MOSFETs " , IEEE Trans . Electron Devices , Vol . 38 , pp . 2082 , 1991 . [ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. ...
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