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Seite 659
矽薄膜金氧半場效電晶體的不尋常電流電壓特性分析 5 - where A = Color for accumulated back - surface and A = Co Cob / [ ( C6 + Cob ) Cor ) for depleted back - surface , W is the channel width , Heff is the effective mobility , and vsat is ...
矽薄膜金氧半場效電晶體的不尋常電流電壓特性分析 5 - where A = Color for accumulated back - surface and A = Co Cob / [ ( C6 + Cob ) Cor ) for depleted back - surface , W is the channel width , Heff is the effective mobility , and vsat is ...
Seite 663
Simulated hysteresis width ( AV ) versus doping concentration and film thickness characteristics for the n - channel SOI device with w / L = 2.4 cm / 0.6 jam and back surface depletion . IV . CONCLUSION An analytical model to predict ...
Simulated hysteresis width ( AV ) versus doping concentration and film thickness characteristics for the n - channel SOI device with w / L = 2.4 cm / 0.6 jam and back surface depletion . IV . CONCLUSION An analytical model to predict ...
Seite 664
[ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. Plummer , " Parasitic Bipolar Gain in Fully Depleted n - Channel SOI MOSFETS " , IEEE Trans . Electron Devices , Vol . 41 , pp . 970 , 1994 .
[ 10 ] E. P. Ver Ploeg , C. T. Nguyen , S. S. Wong , and J. D. Plummer , " Parasitic Bipolar Gain in Fully Depleted n - Channel SOI MOSFETS " , IEEE Trans . Electron Devices , Vol . 41 , pp . 970 , 1994 .
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