逢甲學報, Band 28逢甲大學, 1995 |
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Ergebnisse 1-3 von 16
Seite 377
... density was measured via a density gradient method ( mixture of tetrachloromethane and n - heptane ) . Crystal size were measured by the wide angle X - ray diffraction method . 3. DSC analysis The thermal analysis was measured by DSC ...
... density was measured via a density gradient method ( mixture of tetrachloromethane and n - heptane ) . Crystal size were measured by the wide angle X - ray diffraction method . 3. DSC analysis The thermal analysis was measured by DSC ...
Seite 424
... density . [ 2 ] In addition to the standard d - doping in GaAs and its related compounds , d - doped Si was also studied for its potential applications . [ 3 ] Many high speed and optoelectronic semiconductor devices have been designed ...
... density . [ 2 ] In addition to the standard d - doping in GaAs and its related compounds , d - doped Si was also studied for its potential applications . [ 3 ] Many high speed and optoelectronic semiconductor devices have been designed ...
Seite 426
... density of the subband en . The population density can be expressed by an integration of two dimensioal density of states D2D and Fermi statistics F ( x ) from energy en ∞ N2D ( 6 ) = 2 ( D2D • F ( 5 ) d5 & ( 4 ) where D2D = m which is ...
... density of the subband en . The population density can be expressed by an integration of two dimensioal density of states D2D and Fermi statistics F ( x ) from energy en ∞ N2D ( 6 ) = 2 ( D2D • F ( 5 ) d5 & ( 4 ) where D2D = m which is ...