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Seite 425
In this paper , we use an extended model to take free carriers into consideration by solving the continuity equation . N - type d - dopings in GaAs and in an InGaAs quantum well at the room temperature are investigated .
In this paper , we use an extended model to take free carriers into consideration by solving the continuity equation . N - type d - dopings in GaAs and in an InGaAs quantum well at the room temperature are investigated .
Seite 477
R ] [ x241 41.0 [ 011 011-18 ] - [ 1142 ] L22 421 422 ( 9 ) In the above equation the first and third matrices of the left hand side are the standard L and U matrices from the LDU decomposition . Hence L11 and L22 are just submatrices ...
R ] [ x241 41.0 [ 011 011-18 ] - [ 1142 ] L22 421 422 ( 9 ) In the above equation the first and third matrices of the left hand side are the standard L and U matrices from the LDU decomposition . Hence L11 and L22 are just submatrices ...
Seite 478
The first matrix of the right - hand - side of the above equation is the combined form of the first two matrices and is obtained by simply multiplying them together . The same sort of division here can also be applied to the U11 matrix ...
The first matrix of the right - hand - side of the above equation is the combined form of the first two matrices and is obtained by simply multiplying them together . The same sort of division here can also be applied to the U11 matrix ...
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